Transistor: N-MOSFET | unipolar | 60V | 0.2A | Idm: 1A | 400mW | TO237 | ESD
Transformer: impulse | -40÷125°C | 10.1uH | ±20% | 1.41A | 82.8mΩ
Enclosure base | UL94V-0 | for DIN rail mounting | X: 150mm | Y: 100mm
Transformer: impulse | -40÷125°C | 7.94uH | ±20% | 1.41A | 82.8mΩ
Supercapacitor | THT | 1.5F | 5.4VDC | -10÷30% | 8.5x16.8x21.5mm | 120mΩ


